Breakdown simulation in thin dielectric films based on DLA model (CROSBI ID 564535)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija
Podaci o odgovornosti
Kovačević, Goran ; Lipić, Tomislav ; Skala, Karolj ; Capan, Ivana ; Pivac, Branko ;
engleski
Breakdown simulation in thin dielectric films based on DLA model
In metal oxide semiconductor capacitors subjected to electrical stress the dielectric breakdown is due to the creation of new electronic traps, forming a conductive path between the gate electrode and substrate. The breakdown phenomenon depends on the dielectric thickness and the number and the nature of traps needed to form a perocative path across the dielectric. Here we tried an approach to modeling the dielectric degradation based on fractal distribution of traps. The fractal pattern of cluster of traps formation is produced by algorithm based on difussion limited aggregation (DLA) model, used in the literature to model irreversible colloidal aggregation. In our approach trap generation and migration is not random and we introduced several parameters that simulates the realistic situation. The results obtained by this model are compared with the Weibull statistics used to desccribe the dielectric film failure. Finally the results of the modelling are compared with the experimental data obtained on thin dielectrc film breakdown.
DLA; dielectric breakdown
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Podaci o prilogu
2010.
objavljeno
Podaci o matičnoj publikaciji
E-MRS 2010 Spring Meeting BOOK OF ABSTRACTS
Strasbourg:
Podaci o skupu
E-MRS 2008 Spring Meeting, Symposium I Advanced Silicon Materials Research for Electronic and Photovoltaic Applications II
poster
08.06.2010-10.06.2010
Strasbourg, Francuska