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Multilayers of Ge nanocrystals embedded in Al2O3 matrix : Structural and electrical studies (CROSBI ID 166315)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Pinto, S.R.C. ; Rolo, A.G. ; Chahboun, A. ; Buljan, Maja ; Khodorov, A. ; Kashtiban, R.J. ; Bangert, U. ; Barradas, N.P. ; Alves, E. ; Bernstorff, S. et al. Multilayers of Ge nanocrystals embedded in Al2O3 matrix : Structural and electrical studies // Microelectronic engineering, 87 (2010), 12; 2508-2512. doi: 10.1016/j.mee.2010.06.002

Podaci o odgovornosti

Pinto, S.R.C. ; Rolo, A.G. ; Chahboun, A. ; Buljan, Maja ; Khodorov, A. ; Kashtiban, R.J. ; Bangert, U. ; Barradas, N.P. ; Alves, E. ; Bernstorff, S. ; Gomes, M.J.M.

engleski

Multilayers of Ge nanocrystals embedded in Al2O3 matrix : Structural and electrical studies

In this paper, Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 °C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I–V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer.

Ge nanocrystals ; laser ablation ; GISAXS ; TEM ; RBS

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Podaci o izdanju

87 (12)

2010.

2508-2512

objavljeno

0167-9317

1873-5568

10.1016/j.mee.2010.06.002

Povezanost rada

Fizika

Poveznice
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