Multilayers of Ge nanocrystals embedded in Al2O3 matrix : Structural and electrical studies (CROSBI ID 166315)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Pinto, S.R.C. ; Rolo, A.G. ; Chahboun, A. ; Buljan, Maja ; Khodorov, A. ; Kashtiban, R.J. ; Bangert, U. ; Barradas, N.P. ; Alves, E. ; Bernstorff, S. ; Gomes, M.J.M.
engleski
Multilayers of Ge nanocrystals embedded in Al2O3 matrix : Structural and electrical studies
In this paper, Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 °C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I–V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer.
Ge nanocrystals ; laser ablation ; GISAXS ; TEM ; RBS
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Podaci o izdanju
87 (12)
2010.
2508-2512
objavljeno
0167-9317
1873-5568
10.1016/j.mee.2010.06.002