Collector Region Design and Optimization in Horizontal Current Bipolar Transistor (HCBT) (CROSBI ID 567289)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Suligoj, Tomislav ; Koričić, Marko ; Mochizuki, H. ; Morita, S. ; Shinomura, K. ; Imai, H.
engleski
Collector Region Design and Optimization in Horizontal Current Bipolar Transistor (HCBT)
Three different types of the n-collector region of Horizontal Current Bipolar Transistor (HCBT) are analyzed and compared. The optimum n-collector profile suppresses the charge sharing effect between the intrinsic and extrinsic base regions, resulting in the uniform base width and electric field in the intrinsic transistor. This implies a maximum BVCEO and an optimum fTBVCEO product among compared structures. The HCBT with a selectively implanted collector (SIC) is introduced and examined. It reduces RC and increases fT comparing to the other n-collector designs. The analyses give the guidelines for the optimum HCBT design for targeted applications.
BiCMOS integrated circuits; Bipolar transistors; HF radio communication; Horizontal Current Bipolar Transistor
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Podaci o prilogu
212-215.
2010.
objavljeno
Podaci o matičnoj publikaciji
Ngo, David ; Alvin, Joseph
Austin (TX): Institute of Electrical and Electronics Engineers (IEEE)
978-1-4244-8577-2
Podaci o skupu
2010 Bipolar/BiCMOS Circuts and Technology Meeting
predavanje
04.10.2010-06.10.2010
Austin (TX), Sjedinjene Američke Države