Comparison of high resolution transmission electron microscopy and low frequency Raman scattering in determination of particles size distribution of nanosized TiO2 (CROSBI ID 475686)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija
Podaci o odgovornosti
Ivanda, Mile (predavač) ; Tonejc, Anđelka M. ; Djerdj, Igor ; Gotić, Marijan ; Musić, Svetozar ; Mariotto, Gino
engleski
Comparison of high resolution transmission electron microscopy and low frequency Raman scattering in determination of particles size distribution of nanosized TiO2
Size distribution of TiO2 nanoparticles synthesized by sol-gel method are determined by high resolution transmission electron microscopy (HRTEM) and compared with those determined by low frequency Raman scattering (LFRS). The methodology for the determination of nanosized particle distribution by LFRS is described. It is based on n-1 dependence of the Raman light to vibration coupling coefficient and on the fact that each nanocrystallite of diameter D vibrates with its own eigen frequency n~1/D. The effect of the particle vibrational lifetime on the shape of distribution is analyzed and found to be negligible for the weakly connected TiO2 particles. Fig. 1 shows comparison of the HRTEM and LFRS TiO2 size distributions. On the basis of comparison of particle size distributions deduced by HRTEM and LFRS on 15 different samples, the Raman spectroscopy shows to be simple, fast method that has favorable statistic over the macroscopic probe volume and that enables ''in situ'' measurements.
TiO2 nanoparticles; size distribution; Raman scattering
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o prilogu
48-48-x.
2000.
objavljeno
Podaci o matičnoj publikaciji
Abstracts Book of the 1st International workshop on nanoscale spectroscopy and its applications to semiconductor research
Heun, Stefano
Trst: Elettra Sincrotrone Trieste
Podaci o skupu
1st International workshop on nanoscale spectroscopy and its applications to semiconductor research
pozvano predavanje
11.12.2000-15.12.2000
Trst, Italija