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The photoelectrochemical properties of anodic Bi2O3 films

Anodic oxide films on bismuth are amphoteric semiconductors with n-type and p-type behavior and an optical band gap of 2.8 eV at room temperature. The semiconducting properties were analyzed in situ during the study of electrochemical and photoelectrochemical reactions at the phase boundary oxide—electrolyte. The photopotential, photoconductivity and capacity measurements together with the electrochemical measurements have been shown to be valuable tools in the connection of bulk (electrophysical) properties with surface (electrochemical) properties. Thermodynamic stability is discussed and data are given which refer to the mechanism and kinetics of the cathodic decomposition and photodecomposition of the Bi2O3 layer.

bismuth; anodic oxide films; semiconducting properties

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