engleski

Semiconducting properties of anodically formed layer on antimony

Results of photopolarization, photoconductivity and double layer capacity measurements for the sytem Sb/oxide layer/electrolyte have been given. On the basis of the above measurements it has been concluded that anolic layers on antimony as examined are semiconductors of n-type, band gap Eg=3 eV and donor density ND≈1017 cm−3. The dependence of photovoltage on barrier layer thickness of the Schottky type calculated on the basis of experimental results, also supports the above conclusion, that is, the minimum thickness in which significant photo-effect still appears is of the order of magnitude 10−5 cm, which seems plausible with respect to the expected of light absorption coefficient.

antimony; oxide film; semiconducting properties; photopolarization measurements

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