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X-ray characterization of semiconductor nanostructures (CROSBI ID 170733)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Holy, Vaclav ; Buljan, Maja ; Lechner, Rainer X-ray characterization of semiconductor nanostructures // Semiconductor science and technology, 26 (2011), 6; 064002, 7. doi: 10.1088/0268-1242/26/6/064002

Podaci o odgovornosti

Holy, Vaclav ; Buljan, Maja ; Lechner, Rainer

engleski

X-ray characterization of semiconductor nanostructures

Theoretical description of x-ray scattering from nanostructures is briefly summarized. The application of x-ray scattering for the investigation of the structure of nanocrystals is demonstrated by two characteristic examples comprising standard small-angle x-ray scattering from nanocrystals in an amorphous matrix and x-ray diffraction from crystalline inclusions in an epitaxial layer. New synchrotron-based x-ray scattering methods are briefly discussed.

X-ray scattering ; nanocrystals ; defects and impurities:doping ; implantation ; distribution ; concentration ; etc.

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Podaci o izdanju

26 (6)

2011.

064002

7

objavljeno

0268-1242

1361-6641

10.1088/0268-1242/26/6/064002

Povezanost rada

Fizika

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