engleski

X-ray diffraction study of semiconducting compounds (AxB(1-x))2(CxD(1-x))3 ; A, B = Al, Ga, In ; C, D = S, Se, Te.

The title compounds, studied systematically in the last decade, may be treated as inferred from the ZnS, zincblende (ZB) and wurtzite (W), structural types, the metal ions occupying two thirds of the available positions. The ordering of the metal ions in tetrahedral and octahedral interstices yieldsvarius polytypes, superstructures and OD-structures, depending on the synthesis, composition and temperature. The systems studied by X-ray diffraction (crystal data, thermal expansion, phase diagrams, diffraction broadening ; an original Fortran program for calculation of interplanar spacings, in accordance with the conditions for possible reflexions, facilitated the the indexing of diffractions patterns) and other methods (electrical, DTA, electron probe microanalysis of the following semiconducting compounds: In2Se3, (GaxIn(1-x))2Se3, (AlxIn(1-x))2Se3, (AlxIn(1-x))2S3, (GaxIn81-x))2(SexTe(1-x))3.

diffraction data; compound III2VI3

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