Stopping power of He, C and O in InN (CROSBI ID 573675)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa
Podaci o odgovornosti
Barradas, N.P. ; Alves, E. ; Siketić, Zdravko ; Bogdanović-Radović, Ivančica
engleski
Stopping power of He, C and O in InN
Group III nitrides such as InN, GaN, and their alloys are increasingly important in a host of optoelectronic and electronic devices. The presence of unintentional impurities is one of the factors that can strongly affect the electronic properties of these materials, and thus ion beam analysis techniques can play a fundamental role, in particular heavy ion elastic recoil detection analysis tracing and quantifying these contaminations. However, stopping powers in InN and GaN have not yet been measured, and data analysis relies on using the Bragg rule, which is often inaccurate. We have used a bulk method, previously developed by us and applied successfully to other systems, to determine experimentally the stopping power of several ions in InN. The results of our measurements and bulk method analysis are presented.
stopping power ; indium nitride ; heavy ions
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o prilogu
319-322.
2011.
objavljeno
10.1063/1.3586112
Podaci o matičnoj publikaciji
AIP Conference Proceedings
McDaniel , Floyd D. ; Doyle, Barney L.
online: American Institute of Physics (AIP)
978-0-7354-0891-3
0094-243X
1551-7616
Podaci o skupu
Nepoznat skup
poster
29.02.1904-29.02.2096