Low Temperature Deposition of SiNx Thin Films by the LPCVD Method (CROSBI ID 578163)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Tijanić, Zdenko ; Ristić, Davor ; Ivanda, Mile ; Bogdanović - Radović, Ivancica ; Marciuš, Marijan ; Ristić, Mira ; Gamulin, Ozren ; Musić, Svetozar ; Furić, Kresimir ; Chiasera, Alesandro ; Ferrari, Maurizio ; Righini, Giancarlo Cesare
engleski
Low Temperature Deposition of SiNx Thin Films by the LPCVD Method
Thin silicon rich nitride (SiNx) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Films with the different values of the nitrogen content were deposited by varying the ratio of the flows of ammonia and silane in the horizontal tube reactor. The films were characterized in terms on the surface quality (by scanning electron microscopy), in terms of the nitrogen content x by time of flight elastic recoil detection analysis and by Raman and FTIR spectroscopy.
silicon-rich nitride; LPCVD
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Podaci o prilogu
45-46.
2011.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of 34nd International Convention MIPRO 2011
Biljanovic, Petar ; Skala, Karol
Rijeka: Denona
978-953-233-060-1
Podaci o skupu
34th international conference MIPRO 2011
predavanje
23.05.2011-27.05.2011
Opatija, Hrvatska
