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Electrochemical deposits of gold in transistor assembling process (CROSBI ID 89561)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Gojo, Miroslav ; Ciković, Nada Electrochemical deposits of gold in transistor assembling process // Informacije MIDEM, 26 (1996), 3; 174-178

Podaci o odgovornosti

Gojo, Miroslav ; Ciković, Nada

engleski

Electrochemical deposits of gold in transistor assembling process

A montage of semiconductive components on metal bassements in the electronic industry is of the great practical importance. For this purpose the process of electrochemical deposition of gold from citrate solutions containing thalium ions is studied on rotating disc electrode using cyclic voltametry the method polarization. Structure and morphology of gold coatings are determined by AES and SEM methods of analysis. Gold deposits were observed to be of bright yellow-gold colour and of small-size grain. In the presence of Tl+ ion was possible to achieve higher current density of gold deposition, but the current rise had no consequences on the grain size. The chemical composition of Au-Si eutectic alloy had no greater influence on the electrochemical process thus the electrochemical deposition of gold was equal to that one on the pure gold background.

transistor assembling; electrochemical deposits; gold deposition; gold coating; AES analysis; SEM; Au-Si eutectic alloy

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Podaci o izdanju

26 (3)

1996.

174-178

objavljeno

0352-9045

Povezanost rada

nije evidentirano

Indeksiranost