Optimization of the perimeter doping of ultrashallow p<sup>+</sup>-n<sup>-</sup>-n<sup>-</sup> photodiodes (CROSBI ID 580974)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Knežević, Tihomir ; Suligoj, Tomislav ; Šakić, Agata ; Nanver, Lis K.
engleski
Optimization of the perimeter doping of ultrashallow p<sup>+</sup>-n<sup>-</sup>-n<sup>-</sup> photodiodes
Ultrashallow p<sup>+</sup>-n<sup>-</sup>-n<sup>-</sup> silicon photodiodes, fabricated by a pure boron deposition technology, show excellent performance for detection of Deep Ultra Violet (DUV) radiation due to the nanometer deep pn-junctions. The dark current of photodiode is degraded by the damage of the silicon/oxide interface at the diode perimeter region caused by DUV radiation. Reducing the depletion region width across the p<sup>+</sup>-n<sup>-</sup>-n<sup>-</sup> junction at the silicon/oxide interface will also invariably increase the electric field, reducing the breakdown voltage and increasing the perimeter component of the junction capacitance. In this paper, the trade-off between the depletion region width, breakdown voltage and junction capacitance is examined for ultrashallow p<sup>+</sup>-n<sup>-</sup>-n<sup>-</sup> photodiodes where an additional ultrashallow doped p-region is introduced as an extension to the p-type guard rings. An optimal doping profile is proposed for the added p-region to obtain minimal degradation of electric characteristics for peak doping of 10<sup>18</sup>cm<sup>3</sup>, 5 10<sup>18</sup> cm<sup>3</sup> and 5 10<sup>19</sup> cm<sup>3</sup> at junction depths of 50 nm, 10 nm and 2 nm, respectively, and a distance of 0.5 m between the added p-region and the surrounding n<sup>-</sup> channel stop
Deep ultraviolet; Depletion region; Electric characteristics; Guard-rings; Junction capacitances; Junction depth; Optimal doping profile
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Podaci o prilogu
44-48.
2011.
objavljeno
Podaci o matičnoj publikaciji
Biljanović, Petar ; Skala, Karolj
Zagreb: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO
978-953233067-0
Podaci o skupu
34-th International Convention MIPRO 2011
predavanje
23.05.2011-27.05.2011
Opatija, Hrvatska