engleski

Irradiation effects on polycrystalline silicon

There is a considerable current interest in polycrystalline silicon material grown in ribbon form because of the significant potential for reduced solar cells application. However, if this potential is to be realized, it is essential to understand much more about the impurities and other defects present in the source material. Of the particular importance are impurities and other defects present in the source material. Of the particular importance are intrinsic point defects population in such samples due to their influence on the electronic properties of material. However, a study intrinsic point defects behavior is additionally complicated due to their interaction with the present impurities and different structural defects. Experiments were performed on EFG polycrystalline silicon material rich with carbon and different structural defects such as dislocations and various grain boundaries. Samples were irradiated with gamma-rays from Co60 source and 2 MeV electrons to the doses of 300 Mrad and 10^16 el/cm^2, respectively, to introduce simple point defects into the bulk material. The result obtained with DLTS spectroscopy showed a significant difference between electron ang gamma-rays irradiation. The results are discussed in the light of intrinsic-extrinsic point defects irradiation.

irradiation effects ; silicon

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