Carrier storage in Ge nanoparticles produced by pulsed laser deposition (CROSBI ID 183691)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Martin-Sanchez, J. ; Chahboun, A. ; Gomes, M.J.M. ; Rolo, A.G. ; Pivac, Branko ; Capan, Ivana
engleski
Carrier storage in Ge nanoparticles produced by pulsed laser deposition
In this work, we report on the electrical characterization of Ge nanoparticles (NPs) produced by pulsed laser deposition(PLD) at room temperature (RT) in Ar gas inert atmosphere using a shadowed off-axis deposition geometry. Our results show that functional thin films of crystalline Ge NPs embedded between thin alumina films can be obtained on p-type Si(100) substrates following a low temperature and short rapid thermal annealing (RTA) treatment. Metal–oxide–semiconductor (MOS) structures with and without Ge NPs embedded in the alumina were prepared for the electrical measurements. The results indicate a strong memory effect at relatively low programming voltages (±4 V) due to the presence of Ge NPs.
germanium; nanoparticles; pulsed laser deposition; charge trapping
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Podaci o izdanju
6 (5)
2012.
223-225
objavljeno
1862-6254
10.1002/pssr.201206104