Atomic diffusion in the interface of Fe/Si prepared by magnetron sputtering (CROSBI ID 183933)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Zhang. J. ; Xie, Q. ; Liang, Y. ; Zeng, W. ; Xiao, Q. ; Chen, Q. ; Borjanović, Vesna ; Jakšić, Milko ; Karlušić, Marko ; Gržeta, Biserka ; Yamada, K. ; Luo, J.
engleski
Atomic diffusion in the interface of Fe/Si prepared by magnetron sputtering
Iron filmswere deposited onto the Si (100) substrates by DC-magnetron sputterig and susequently annealed in the temperature range of 873 to 1273 K for 2 hours. Rutherford backscattering analysis was performed to determine the elemental depth profiles and the oxidation process in samples. The silicides formation was characterized by X-ray diffraction. The results indicate that annealing at 873 K causes only a smallmixing of the Fe and Si atoms near the Fe/Si interface, while the 973 K annealing enhances the atomic diffusion and yealds to a graded concentration distribution of Fe and Si. The metal-rich silicides start to nucleate and grow at 973 K and only alpha-FeSi2 formation is conduced after annealing at 1273 K for 2 hours.
magnetron sputterig ; anneal ; atomic diffusion ; silicide
Rad je kao poster prezentiran na skupu APAC-SILICIDE 2010 Tsukuba Asia-Pacific Conference on Semiconducting Silicides and Related Materials Science and Technology Towards Sustainable Optoelectronics, održanom od 24.-26.7.2010., Tsukuba, Ibaraki, Japan ; objavljen u Knjizi sažetaka.
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