engleski

Hall-effect in Ni-based amorphous alloys

From the Hall coefficient R0 we have determined the conduction electron density in 25 NiBSi and NiPB melt-quenched alloys. From these results we have determined the number of electrons that boron, silicon and phosphorus contribute to the conduction band of the alloys. The number of electrons contributed by boron, silicon, and phosphorus increases with the total metalloid content. At the same time the number contributed by silicon is one electron per atom greater that the number contributed by boron (in agreement with the different valencies of silicon and boron). The contribution of phosphorus is, however, only about 0.25 electrons per atom greater than that of silicon.

Hall-effect; Ni-based amorphous alloys

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