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Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method (CROSBI ID 188031)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Ristić, Davor ; Ivanda, Mile ; Furić, Kresimir ; Chiasera, Alessandro ; Moser, Enrico ; Ferrari, Maurizio Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method // Croatica chemica acta, 85 (2012), 1; 91-96. doi: 10.5562/cca1969

Podaci o odgovornosti

Ristić, Davor ; Ivanda, Mile ; Furić, Kresimir ; Chiasera, Alessandro ; Moser, Enrico ; Ferrari, Maurizio

engleski

Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method

Silicon-rich oxide (SiOx, 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100 °C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy.

LPCVD; silicon; thermal decomposition; thin films

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Podaci o izdanju

85 (1)

2012.

91-96

objavljeno

0011-1643

10.5562/cca1969

Povezanost rada

Fizika

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