engleski

Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration

Fabrication of a novel high-voltage double-emitter horizontal current bipolar transistor (HCBT) structure integrated with the standard 0.18-μm CMOS and high-speed HCBT is presented. The device takes advantage of 3-D collector charge sharing to achieve full depletion of the intrinsic collector region and to limit the electric field at the base–collector junction. Transistors with BVCEO = 12.6 V, fT · BVCEO = 160 GHz · V, and β ·VA = 28 700 V are demonstrated. The device is fabricated in HCBT BiCMOS process flow without the use of additional lithography masks and represents a zero-cost solution for integration of a high-voltage bipolar device.

BiCMOS technology; charge sharing; fully depleted collector; high-voltage bipolar transistors; horizontal current bipolar transistor (HCBT)

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