engleski

Fluorescence dependence of IBIC collection efficiency of CMOS transistors

IBIC (Ion Beam Induced Charge) imaging of deep structures of semiconductor devices with a focused MeV light ion beam has been shown to o€er significant advantages over the established EBIC (Electron Beam Induced Current) technique, because the large range and the small lateral straggling of the ion beam allows direct imaging of buried device structures. The technique is limited by the accumulation of radiation damage that reduces the charge collection eciency. We report on measurements of the beam ¯uence dependence on IBIC collection eciency for proton and alpha particle beams at 2000 keV energy. A HCF4007 CMOS transistor array was used in these measurements. The influence of surface passivation layers on charge collection eciency and its evolution with ion dose is discussed.

microbeam; charge microscopy; device imaging

Rad je prezentiran na skupu Ion Beam Analysis, održanom od 27.07.–01.08.1997., Lisabon, Portugal ; Maria Fernanda Da Silva, Jose Carvalho Soares, Mark Breese (ur.).