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Formation and Luminescence of P-type Porous Polycrystalline Silicon

Luminescent porous silicon (PS) was obtained by galvanostatic electrochemical anodisation of p- type polycrystalline silicon (poly-Si) film in aqueous hydrofluoric acid (HF)/ethanol electrolyte. Poly-Si film was prepared and boron delta-doped on n-type silicon wafers by low pressure chemical vapor deposition (LPCVD) process. Porous poly-Si surface morphology varied as a function of anodisation time. Scanning electron microscope (SEM) images have shown macro- porous Si formation along grain boundaries. S-band photo-luminescence (PL) was measured in all samples, while Raman measurements indicated minimal or no confinement effects.

porous silicon; polycrystalline silicon; boron; Raman

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