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Some physical problems in preparation and analysis of heavily boron and phosphorus doped polysilicon thin films

We discuss problems in the preparation and analysis of the solid solution phase in the case of heavily phosphorus and boron doped polycrystalline silicon. Some currently used methods and the technology of polysilicon thin films preparation are presented. Based on and afore these discussions, we propose a process of preparation of a good quality heavily boron and phosphorus doped silicon thin film samples. The characterisation, with some new methods of characterisations, and the investigation of the stability of such obtained samples are presented. It was also indicated that the problem of the determination of the current carrier concentration is not yet solved even in the heavily doped, metallic, regime in polysilicon.

Si:B; Si:P; preparation

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