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Damage kinetics in MeV heavy ion irradiated amorphous amorphous SiO_2

By expanding application areas of optical fibers to different novel technologies, investigations of the nature of damage creation that may influence their light transmission properties came into the focus of our research. In that respect, heavy ion interactions with amorphous SiO2 may give some guidance towards better understanding of these effects. We investigated irradiation induced changes in 100 nm thin amorphous SiO2 films using infrared spectroscopy and spectroscopic ellipsometry. Damage kinetics was studied both below and above ion track formation threshold using oxygen ion beams of 1 MeV and 3 MeV energy, respectively. For comparison, samples irradiated using 1.25 MeV gamma rays were also characterized using both techniques. Obtained experimental results were analyzed within thermal spike framework

swift heavy ion; SiO_2

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