engleski

Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL

In order to study the possibility of influencing the phase containing predominantly Si-H bonds, with as low as possible influence on remaining material, samples of a-Si were exposed to Duke- FEL Mark III radiation. The wavelength of radiation was selected to fit the maximum absorption of stretching vibrations of Si-H bonds. By varyng the wavelength between 4.8 and 5mm, the illumination time and the power density, different type and degree of structural ordering, monitored by Raman spectroscopy, regarding Si-H bonds and Si-Si bonds was obtained. Using 5 mm at 10 kW/cm2 leads to increase in structural disordering. However, increasing power to 60 kW/cm2 improves both short and intermediate order in a-Si:H. Further increasing power density by an order of magnitude results in crystallization of the sample.

selective bond breaking; amorphous silicon; silicon-hydrohen bonds; Free Electron Laser

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