Influence of RF-sputtering power on formation of vertically stacked Si1−xGex nanocrystals between ultra-thin amorphous Al2O3 layers: structural and photoluminescence properties (CROSBI ID 205337)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Vieira, E.M.F. ; Martín-Sánchez, J. ; Roldan, M.A. ; Varela, M. ; Buljan, Maja ; Bernstorff, Sigrid ; Barradas, N.P. ; Franco, N. ; Correia, M.R. ; Rolo, A.G. ; Pennycook, S.J. ; Molina, S..I ; Alves, E. ; Chahboun, A. ; Gomes, M.J.M.
engleski
Influence of RF-sputtering power on formation of vertically stacked Si1−xGex nanocrystals between ultra-thin amorphous Al2O3 layers: structural and photoluminescence properties
In this work, we investigate the structural and photoluminescence (PL) properties of (SiGe+Al2O3)/Al2O3 multi-layer films with layer thicknesses in the range of a few nanometres. The films were prepared by magnetron sputtering deposition at room temperature followed by an annealing process to promote the formation of small SiGe nanocrystals (NCs) (~3 to 5 nm) embedded between ultra-thin (~6 nm thickness) Al2O3 layers. Our results show that the structural and compositional properties of the films can be tuned by changing the RF-power. It is found that nearly spherical and well confined isolated SiGe NCs (~5 nm) are obtained for an RF-power value of 80 W. The PL properties of the films were studied and optical emission in the blue visible wavelength region was observed.
surfaces; interfaces and thin films; Nanoscale science and low-D systems
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Podaci o izdanju
46 (38)
2013.
385301-1-385301-10
objavljeno
0022-3727
10.1088/0022-3727/46/38/385301