In-depth elemental characterization of Cu(In, Ga)Se2 thin film solar cells by means of RBS and PIXE techniques (CROSBI ID 206547)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Karydas, A.G. ; Bogdanović Radović, Ivančica ; Streeck, C. ; Kaufmannd, C ; Caballero, R. ; Rissom, T. ; Kanngießer, B. ; Beckhoff, B. ; Jakšić, Milko ; Barradas, N.P.
engleski
In-depth elemental characterization of Cu(In, Ga)Se2 thin film solar cells by means of RBS and PIXE techniques
Thin films based on Cu(In, Ga)Se2 are used as absorber cells in photovoltaic devices. In and Ga graded depth profiles are designed to optimize the solar cell performance. Simultaneous Rutherford Backscattering Spectrometry (RBS) and Particle Induced X-ray Emission (PIXE) with 3 MeV 4He ions were used in conjunction to determine the depth profile of all the heavy elements in Cu(In, Ga)Se2 absorbers and complete solar cells. The RBS and PIXE data from one sample were analyzed synergistically, providing reliable depth profiles that satisfy all the data collected. An uncertainty analysis was done, probing the sensitivity of the analysis to different assumptions. The analytical possibilities of the combined RBS/PIXE alpha beam measurements of the CIGSe thin film solar cells, as well as the uncertainties induced in the quantitative methodology are discussed and critically assessed.
CIGS ; Thin film solar cells ; RBS ; ERDA ; Data analysis
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Podaci o izdanju
331
2014.
93-95
objavljeno
0168-583X
10.1016/j.nimb.2014.01.025