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Structural changes in amorphous silicon annealed at low temperatures (CROSBI ID 26535)

Prilog u knjizi | izvorni znanstveni rad

Pivac, Branko ; Dubček, Pavo ; Milat, Ognjen ; Zulim, Ivan Structural changes in amorphous silicon annealed at low temperatures // Amorphous and Heterogeneous Silicon-Based Films - 2001 / Stutzmann, M. ; Boyce, J.B. ; Cohen, J.D. et al. (ur.). Warrendale (PA): Materials Research Society, 2001. str. A19.9.1-A19.9.6-x

Podaci o odgovornosti

Pivac, Branko ; Dubček, Pavo ; Milat, Ognjen ; Zulim, Ivan

engleski

Structural changes in amorphous silicon annealed at low temperatures

The light-induced creation of dangling bonds in amorphous silicon, called Staebler-Wronski effect is major obstacle to the widespread technological application of this material. In order to stabilize solar cells characteristics, devices are exposed to the light soaking (aging) accompanied by low temperature annealing. We used FTIR, X-ray reflectivity and SAXS analysis to monitor the structural changes occurring during the low temperature annealing of undoped a-Si:H films. FTIR results show that hydrogen is moved from positions (voids) where it was accumulated unbonded to silicon and it was trapped at dangling bonds. SAXS measurements confirmed the existence of the voids of about 2.5 nm in diameter. Hydrogen removal from the voids was confirmed by SAXS and X-ray reflectivity measurements showing that this treatment influenced their size and redistribution.

amorphous silicon, defects, light soaking

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Podaci o prilogu

A19.9.1-A19.9.6-x.

objavljeno

Podaci o knjizi

Amorphous and Heterogeneous Silicon-Based Films - 2001

Stutzmann, M. ; Boyce, J.B. ; Cohen, J.D. ; Collins, R.W. ; Hanna, J

Warrendale (PA): Materials Research Society

2001.

1-55899-600-1

Povezanost rada

Fizika