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CdS nanocrystals formed in SiO2 substrates by ion implantation

In this work, CdS nanocrystal were formed in SiO2 substrates by implantation of Cd and S atoms (up to 10(17)/cm(2)) and subsequent annealing (up to 900 degreesC). The implanted and annealed layer was studied by X-ray diffraction (XRD), UV transmittance and reflectance measurements (energy range 1.4-6.5 eV), and Raman spectroscopy. Upon annealing, all methods proved the synthesis of CdS crystallites from the starting components, and the features characteristicof the CdS-phase were strongly and consistently dependent on ion dose and annealing temperature. The analysis of the results shows that by implantation and post-implantation treatment, the average size of CdS crystallites can be controlled, and that smaller CdS nanocrystals are obtained for lower doses and lower annealing temperatures.

nanocrystals; cadmium sulfide; Cds. Ii-vi. implantation

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