engleski

Thermal stability of Al-Mo thin film alloys

Thin AlxMo100
x films (40  x  90 with x in steps of 5 at % Al) were prepared by magnetron codeposition onto alumina, glass, and saphire substrates at room temperature. The film thickness was about 400 nm, and they were amorphous for 45  x  85. The films' structural changes upon heating were investigated by measurement of the electrical resistivity variation with temperature, r(T), during the isochronal heating. Thus obtained results were complemented, and conclusions confirmed, by GIXRD analysis for selected heating temperatures. The dynamical temperatures of crystallization, Tx, were determined from the sharp increase of the derivative of r with respect to temperature. No systematic dependence of Tx on film substrate has been observed. Except for the Al85Mo15 film, the r of the amorphous films increase on the crystallization. The temperature of crystallization exhibits maximum around 530 C for alloy compositions with x ¼ 55 and 60. Electrical resistivity of both amorphous and crystallized films show a strong dependence on alloy composition, with a maximum for Al75Mo25 alloy. The resistivity of Al75Mo25 film is very large and amounts to 1000 mU cm and 3000 mU cm in amorphous and crystallized film, respectively, with the large negative temperature coefficient of
10  10
4 K
1 and
14  10
4 K
1, respectively. Although the crystallization temperature observed for the examined amorphous AleMo alloys is not very high, it might allow to exploit excellent corrosion properties of such films at some elevated temperatures.

Thin films; Magnetron sputtering; Amorphous alloys; Al-Mo; Electrical resistivity; X-ray diffraction; Crystallization

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