Raman study of insulating and conductive ZnO:(Al, Mn) thin films (CROSBI ID 221640)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Cerqueira, M.F. ; Viseu, T. ; Ayres de Campos, J. ; Rolo, A.G. ; de Lacerda-Aroso, T. ; Oliveira, F. ; Bogdanović-Radović, I. ; Alves, E. ; and Vasilevskiy, M. ;
engleski
Raman study of insulating and conductive ZnO:(Al, Mn) thin films
Raman spectroscopy results obtained for undoped and Al- and/or Mn-doped ZnO thin films produced by RF-sputtering are reported. The effect of the doping method (either co- sputtering or ion implantation), the dopant type and its concentration on the Raman- active vibrational modes in these films were studied in detail. The results are discussed with focus on the peak shifts and broadening, and on the doping-induced relaxation of the symmetry selection rules. A particular attention is paid to the 520-530 cm-1 Raman band observed in all Mn containing samples and a simple theoretical model and arguments are presented in support of its relation to the local (gap) phonon mode produced by Mn atoms substituting Zn in the cationic sublattice of the ZnO crystal.
Raman spectroscopy; Transparent conducting oxides
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Podaci o izdanju
212 (10)
2015.
2345-2354
objavljeno
1862-6300
10.1002/pssa.201532162