MeV-SIMS yield measurements using a Si-PIN diode as a primary ion current counter (CROSBI ID 225242)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Stoytschew, V. ; Bogdanović Radović, Ivančica ; Demarche, J. ; Jakšić, Milko ; Matjačić, L. ; Siketić, Zdravko ; Webb, R.
engleski
MeV-SIMS yield measurements using a Si-PIN diode as a primary ion current counter
Megaelectronvolt-Secondary Ion Mass Spectrometry (MeV-SIMS) is an emerging Ion Beam Analysis technique for molecular speciation and submicron imaging. Various setups have been constructed in the recent years. Still a systematic investigation on the dependence of MeV-SIMS yields on different ion beam parameters is missing. A reliable measurement method of the beam current down to the attoampere range is needed for this investigation. Therefore, a new detector has been added to the MeV-SIMS setup at the Ruđer Bošković Institute (RBI), which measures the current directly using a Si PIN-diode. In this work, we present the constructed system, its characteristics, and results of the first yield measurements. These measurements have already identified important factors that have to be considered while constructing a MeV SIMS setup.
yield; MeV SIMS; current; electronic stopping; molecular analysis
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Podaci o izdanju
371
2016.
194-198
objavljeno
0168-583X
10.1016/j.nimb.2015.11.020