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Simulation Study of the Composite Silicon Solar Cell Efficiency Sensitivity to the Absorption Coefficients and the Thickness of Intrinsic Absorber Layer

In this paper, two composite silicon solar cells n+-ii-p+ based on hydrogenated amorphous - nanocrystalline silicon (a-Si:H/nc-Si:H) have been simulated by using computer modeling and simulation program (AMPS-1D - Analysis of Microelectronic and Photonic Structures). Various factors that affect cell performance have been studied, such as spectral light irradiation (flux flow), front and back contacts potential, work function and reflection coefficients of Transparent Conducting Oxide (TCO), layers absorption coefficients, band gap and layer thickness up to 1500nm of the homogenous and heterogeneous intrinsic absorber layer of silicon solar cells. It was found that in case of standard solar cell conditions a layers absorption coefficient has a major contribution to solar cell performance. It is demonstrated that, for homogenous intrinsic absorber layer with crystal fraction Xc=33% cell efficiency is higher than in case heterogeneous intrinsic absorber layer which contains of arbitrary crystal fractions depending of layer thickness. Second case scenario of silicon thin film composite structure is more common in solar cells production according to PECVD deposition technique proven by earlier X-ray diffraction and high resolution electron microscopy measurements.

absorption coefficient ; crystal ; heterogeneous ; intrinsic ; nanocrystalline

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