engleski

Defects in carbon and oxygen implanted p-type silicon

Both oxygen and carbon ion implantation are frequently used to form either insulating buried SiO2 or SiC layer for various purposes. This creates a renewal of the interest in defects produced during such implantation processes. In the present paper we report on deep level transient spectroscopy studies of defect states occurring in boron-doped p-type silicon after high dose C+ and CO+ ion implantation and subsequent thermal annealing. It is shown that the predominant defect created during the implantation is in both cases related to silicon selfinterstitial clusters, which upon annealing at higher temperatures evolve to extended structural defects.

silicon ; ion implantation ; defects ; oxygen ; carbon ; DLTS

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