Experimental observation of optical amplification in silicon nanocrystals (CROSBI ID 483511)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija
Podaci o odgovornosti
Ivanda, Mile ; Desnica, Uroš ; White, C. W. ; Kiefer, W.
engleski
Experimental observation of optical amplification in silicon nanocrystals
We have measured optical amplification in cw laser pumped silicon nanocrystals. The silicon nanocrystals of 3.5 and 5.5 nm in mean diameter and of 0.5x1022 and 2.5x1022 cm-3 excess silicon concentration, respectively, were prepared by ion implantation in fused silica substrate followed by high temperature thermal annealing. By using variable strip length method the amplified spontanous emission spectra (A.S.E.) were measured at room temperature using different cw laser excitations wavelength. The stimulated emission was observed on the sample with larger silicon concentration, only. With red excitation the A.S.E. peak at 922 nm of 8 nm full width at half maximum, of net modal gain of 33 cm-1 and strong directionality properties was observed.
Stimulated emission; Nano-silicon; Optical gain; Laser
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Podaci o prilogu
29-29-x.
2002.
objavljeno
Podaci o matičnoj publikaciji
Optical Amplification and Stimulation in Silicon : NATO Advanced Research Workshop towards the first Silicon Laser : Book of Abstracts
Pavesi, L.
Trident: University of Trento
Podaci o skupu
Optical Amplification and Stimulation in Silicon, NATO Advanced Research Workshop towards the first Silicon Laser
pozvano predavanje
21.09.2002-26.09.2002
Trento, Italija