engleski

Raman Scattering And Stimulated Light Emission From Nanosized Silicon Crystals

Silicon, as an indirect gap semiconductor, is a poor light emitter and, therefore, has been considered as unsuitable for optoelectronic application. Recent discovery of optical gain in silicon nanocrystals promises soon fabrication of silicon laser [1]. Here we provide further evidences for the optical gain in nanocrystaline silicon embedded in quartz matrix by using continuous wave laser excitation. The silicon nanocrystals were produced by high energy Si+-ion implantation into quartz substrate down to a depth of 1 mm followed by high-temperature annealing at 1100 oC for 1 hour. The Raman scattering experiments were carried out at room temperature using 514.5 nm laser excitation and triple monochromator. The optical gain was measured on the basis of the variable strip length method using the krypton ion laser excitation line at 647 nm ...

nc-Si; Stimulated emission; Optical gain; Nanoparticles; Raman

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