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NIR laser light sensors based on nanosilicon/organic semiconductor junctions for telecom applications (CROSBI ID 635947)

Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija

Đerek, Vedran ; Glowacki, Eric Daniel ; Sariciftci, Niyazi Serdar ; Ivanda, Mile NIR laser light sensors based on nanosilicon/organic semiconductor junctions for telecom applications // COST MP1401 Annual Conference and 2nd MC meeting Conference proceedings. 2016

Podaci o odgovornosti

Đerek, Vedran ; Glowacki, Eric Daniel ; Sariciftci, Niyazi Serdar ; Ivanda, Mile

engleski

NIR laser light sensors based on nanosilicon/organic semiconductor junctions for telecom applications

Infrared sensitivity of the silicon photodiodes is limited by the 1.11 eV band-gap of bulk silicon. Hybrid junctions of silicon and organic semiconductor for use in photodiodes show promise in extending the range of spectral sensitivity of silicon. Extension of spectral sensitivity to infrared wavelengths beyond 1250 nm, while keeping the CMOS compatibility would be of great importance to possible telecom uses. By vacuum-deposition of thin films of organic semiconductors on silicon substrates it is possible to vary the barrier height of the heterojunction, and thus also the spectral response of the devices. By using micro and nano-structured silicon substrates, electronic and optical properties of structured substrates can be used to improve the device performance in comparison to using flat substrates. Heterojunction photodiodes based on thin films of hydrogen-bonded pigment tyrian purple (6, 6'- dibromoindigo) formed on silicon substrates by vacuum evaporation show sub silicon-bandgap IR sensitivity up to 2500 nm with responsivity of ~5 mA/W in the telecom C-band [1, 2]. We show how micro- and nano-structuring of silicon substrates prior to vacuum evaporation of organic layer significantly improves the responsivity of hybrid silicon-organic photodiodes. [1] M. Bednorz, G. J. Matt, E. D. Głowacki, T. Fromherz, C. J. Brabec, M. C. Scharber, H. Sitter, and N. S. Sariciftci, Org. Electron. 14 (2013), 1344 [2] V. Đerek, E. Głowacki, M. Sytnyk, W. Heiss, M. Marciuš, M. Ristić, M. Ivanda, and N.S. Sariciftci, Applied Physics Letters, 107 (2015) 083302

NIR; photodiode; telecom; hybrid; silicon; organic; heterojunction

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Podaci o prilogu

2016.

nije evidentirano

objavljeno

Podaci o matičnoj publikaciji

COST MP1401 Annual Conference and 2nd MC meeting Conference proceedings

Podaci o skupu

COST MP1401 Annual Conference and 2nd MC meeting

predavanje

12.04.2016-15.04.2016

Zadar, Hrvatska

Povezanost rada

Fizika, Kemija

Poveznice