Semiconducting Properties of Surface Films on Tin: Electrochemical Impedance Spectroscopy Studies (CROSBI ID 465280)
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Podaci o odgovornosti
Šeruga, Marijan ; Omanović, Saša ; Metikoš-Huković, Mirjana
engleski
Semiconducting Properties of Surface Films on Tin: Electrochemical Impedance Spectroscopy Studies
The semiconducting properties of the duplex surface films grown on tin in citrate buffer solution pH=6 were studied in wide potential and frequency range, by means of electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV) and X-ray photoelectron spectroscopy (XPS). The results confirmed that different types of films grow at low potentials (inner layer) and high potentials (outer layer). Semiconducting properties were studied in the conditions in which the electronic conductivity of the films prevailed, i.e. on stabilised electrodes. Both films show n-type semiconducting properties and can be accurately described by the band model of solids. Both films follow a Mott-Schottky behaviour ; flat band potentials (E_fb) and donor concentrations (N_D) were estimated. The behaviour of thick films is more complex due to incomplete donor dissociation. Considering the dissociation of donors as an equilibrium reaction, the concentration of conductive electrons is approximately equal to concentration of dissociated donors, n=N_D^+. The equivalent electrical circuits have been proposed for modelling the EIS data.
tin; duplex oxide films; semiconductor; Mott-Schottky; impedance spectroscopy; XPS; cyclic voltammetry
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Podaci o prilogu
P7b15-x.
1996.
objavljeno
Podaci o matičnoj publikaciji
47th Annual Meeting of the International Society Electrochemistry : Abstracts
Inzelt, G.
International Electrochemical Society
Podaci o skupu
47th Meeting of ISE
poster
01.09.1996-06.09.1996
Balatonfüred, Mađarska; Veszprém, Mađarska