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Diluted Magnetic Semiconductors Ga_(1-x)Mn_xAs : From Thin Films to Magnetic Tunnel Junctions (CROSBI ID 484399)

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Mattana, R. ; George, Jean-Marie ; Jaffres, Henry ; N'Guyen Van Dau, F. ; Fert, Albert ; Lepine, B. ; Guivarc'h, A. ; Jezequel, G. ; Hamzić, Amir ; Basletić, Mario et al. Diluted Magnetic Semiconductors Ga_(1-x)Mn_xAs : From Thin Films to Magnetic Tunnel Junctions // The 19th General Conference of the Condensed Matter Division of the European Physical Society Brighton, Ujedinjeno Kraljevstvo, 07.04.2002-11.04.2002

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Mattana, R. ; George, Jean-Marie ; Jaffres, Henry ; N'Guyen Van Dau, F. ; Fert, Albert ; Lepine, B. ; Guivarc'h, A. ; Jezequel, G. ; Hamzić, Amir ; Basletić, Mario ; Tafra, Emil

engleski

Diluted Magnetic Semiconductors Ga_(1-x)Mn_xAs : From Thin Films to Magnetic Tunnel Junctions

In order to achieve spin dependent transport in semiconductor heterostructures, diluted magnetic semiconductors (DMS) present the advantage to be more compatible with semiconductors than metal transition. DMS allow to add a degree of freedom (the spin of carriers) in semiconductor heterostructures and open up new opportunities for spin electronic. We have studied the influence of the manganese concentration on the magnetic and transport properties of Ga_(1-x)Mn_xAs thin films and spin dependent transport in magnetic tunnel junctions Ga_(1-x)Mn_xAs/AlAs/Ga_(1-x)Mn_xAs.

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The 19th General Conference of the Condensed Matter Division of the European Physical Society

poster

07.04.2002-11.04.2002

Brighton, Ujedinjeno Kraljevstvo

Povezanost rada

Fizika