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Photoemission Of Xe Adsorbed On Si(111)7x7, Ag/Si(111), Au/Si(111) And O/Si(111) Surfaces

5p-electron binding energy shifts of Xe adsorbed on the Si(111)7X7-,Ag/Si(111)-, Au/Si(111)- surfaces of n- and p-type silicon and on O/Si(111) surfaces of n-type silicon were studied. The Xe 5p electron binding energy differences as big as 1.5 eV found for the examined surfaces were explained in terms of induced surface photo-voltage and work function changes. Irrespective of substantial binding energy shifts induced by the differences in structural and electronic properties of the examined surfaces no change in the ionization energy of the 5p level of Xe adsorbed on these surfaces was found. [References: 32]

Electronic-structure; Xenon; Photovoltage; GaAs(110); Local probe; 5p-level

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