engleski

Transport properties of neutron irradiated 4H-SiC Schottky diode

Silicon-carbide (SiC) is the semiconductor material with properties which make it suitable for radiation detection. Wide band gap, small intrinsic carrier concentration, small leakage current, large breakdown voltage, good thermal conductivity, hardness, excellent resistance to large temperatures and high radiation tolerance are all properties which make it better than silicon - the most widely used material in semiconductor detectors [1]. 4H-SiC is the SiC polymorph with the best detection properties. Two n-type Ni/4H-SiC diodes with similar dopance and dimensions have been irradiated with thermal and fast reactor neutrons (both at doses 10^10 cm-2, TRIGA Mark reactor – Jožef Štefan Institute) to study their effect on transport properties, which have been measured by current-voltage (I-V) and capacitance-voltage (C-V) at temperatures 150K-375K. All of the observed changes in I-V point to the introduced interface states that locally influence Schottky barrier height. Fast neutrons have introduced much more concentration of such defects than thermal neutrons. From C-V small decrease in free carrier concentration has been observed. [1] Damjan Blažeka, Transportna svojstva poluvodičkih detektora – diplomski rad, 2017

semiconductors ; detectors ; radiation ; silicon-carbide ;

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