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Spin-dependent electron transport in C and Ge doped BN monolayers (CROSBI ID 244589)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Gupta, Sanjeev K. ; He, Haiying ; Lukačević, Igor ; Pandey, Ravindra Spin-dependent electron transport in C and Ge doped BN monolayers // PCCP. Physical chemistry chemical physics, 19 (2017), 45; 30370-30380. doi: 10.1039/C7CP05596J

Podaci o odgovornosti

Gupta, Sanjeev K. ; He, Haiying ; Lukačević, Igor ; Pandey, Ravindra

engleski

Spin-dependent electron transport in C and Ge doped BN monolayers

Recent advances in the synthesis and characterisation of h- BN monolayers offer opportunities to tailor their electronic properties via aliovalent substitutions in the lattice. In this paper, we consider a h-BN monolayer doped with C or Ge, and find that dopants modify the Fermi level of the pristine monolayer. Three-fold coordinated dopants relax to the convex-shaped structures, while four-fold coordinated ones retain the planar structures. These modifications, in turn, lead to unique features in the electron transport characteristics including significant enhancement of current at the dopant site, diode-like asymmetric current– voltage response, and spin-dependent current. We find that the spin-polarised transport properties of the doped BN monolayers could be used for the next-generation devices at the nanoscale.

2D materials ; boron-nitride ; electron transport ; spin-diodes ; density functional theory

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Podaci o izdanju

19 (45)

2017.

30370-30380

objavljeno

1463-9076

1463-9084

10.1039/C7CP05596J

Povezanost rada

Fizika, Kemija

Poveznice
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