InAlAs solar cell on a GaAs substrate employing a graded In(x)Ga(1-x)As-InP metamorphic buffer layer (CROSBI ID 253080)
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InAlAs solar cell on a GaAs substrate employing a graded In(x)Ga(1-x)As-InP metamorphic buffer layer
Single junction In(0.52)Al(0.48)As solar cells have been grown on a (100) GaAs substrate by employing a 1 mu m thick compositionally graded In(x)Ga(1-x)As/InP metamorphic buffer layer to accommodate the 3.9% mismatch. Cells processed from the 0.8 mu m thick InAlAs layers had photovoltaic conversion efficiency of 5% with an open circuit voltage of 0.72 V, short-circuit current density of 9.3 mA/cm(2), and a fill factor of 74.5% under standard air mass 1.5 illumination. The threading dislocation density was estimated to be 3 x 10(8) cm(-2).
solar cell ; InAlAs ; metamorphic buffer
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