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InAlAs solar cell on a GaAs substrate employing a graded In(x)Ga(1-x)As-InP metamorphic buffer layer (CROSBI ID 253080)

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...Manganaro, Marina InAlAs solar cell on a GaAs substrate employing a graded In(x)Ga(1-x)As-InP metamorphic buffer layer // Applied physics letters, 102 (2013), 3; 3906, 4. doi: 10.1063/1.4789521

Podaci o odgovornosti

...Manganaro, Marina

engleski

InAlAs solar cell on a GaAs substrate employing a graded In(x)Ga(1-x)As-InP metamorphic buffer layer

Single junction In(0.52)Al(0.48)As solar cells have been grown on a (100) GaAs substrate by employing a 1 mu m thick compositionally graded In(x)Ga(1-x)As/InP metamorphic buffer layer to accommodate the 3.9% mismatch. Cells processed from the 0.8 mu m thick InAlAs layers had photovoltaic conversion efficiency of 5% with an open circuit voltage of 0.72 V, short-circuit current density of 9.3 mA/cm(2), and a fill factor of 74.5% under standard air mass 1.5 illumination. The threading dislocation density was estimated to be 3 x 10(8) cm(-2).

solar cell ; InAlAs ; metamorphic buffer

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Podaci o izdanju

102 (3)

2013.

3906

4

objavljeno

0003-6951

1077-3118

10.1063/1.4789521

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Fizika

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