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Pregled bibliografske jedinice broj: 375184

Časopis

Autori: Matić, Tomislav; Švedek, Tomislav; Herceg, Marijan
Naslov: Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor
( Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor )
Izvornik: Elektrotehniški vestnik (0013-5852) 75 (2008), 3; 97-104
Vrsta rada: članak
Ključne riječi: silicon carbide; PN diode; BJT transistor; temperature characteristic; Ebers-Moll model
( silicon carbide; PN diode; BJT transistor; temperature characteristic; Ebers-Moll model )
Sažetak:
The paper presents a model developed for numerical simulation of temperature dependence of a hypothetical Si and SiC diode and BJT current-voltage characteristics. A classical Si PN wide-base diode model and an E-M BJT model are used with SiC semiconductor-specific parameters. Intrinsic carrier concentrations, carrier mobility temperature and doping concentration dependence are calculated for both semiconductors. The obtained current-voltage characteristics are compared and their temperature dependence is discussed. A hypothetic SiC PN diode has a much higher knee voltage and a wider extrinsic or operating temperature range, and the same applies to SiC BJT, which altogether makes SiC devices more appropriate for high-temperature and high-power applications.
Projekt / tema: 165-0361630-3049, 165-0362980-2002, 165-0362027-1479
Izvorni jezik: eng
Rad je indeksiran u
bazama podataka:
Scopus
Kategorija: Znanstveni
Znanstvena područja:
Elektrotehnika,Računarstvo
URL cjelovitog teksta:
Časopis izlazi u samo elektroničkom izdanju: NE
Google Scholar: Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor
Upisao u CROSBI: tmatic@etfos.hr (tmatic@etfos.hr), 10. Pro. 2008. u 10:27 sati



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