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Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor (CROSBI ID 146096)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Matić, Tomislav ; Švedek, Tomislav ; Herceg, Marijan Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor // Elektrotehniški vestnik, 75 (2008), 3; 97-104

Podaci o odgovornosti

Matić, Tomislav ; Švedek, Tomislav ; Herceg, Marijan

engleski

Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor

The paper presents a model developed for numerical simulation of temperature dependence of a hypothetical Si and SiC diode and BJT current-voltage characteristics. A classical Si PN wide-base diode model and an E-M BJT model are used with SiC semiconductor-specific parameters. Intrinsic carrier concentrations, carrier mobility temperature and doping concentration dependence are calculated for both semiconductors. The obtained current-voltage characteristics are compared and their temperature dependence is discussed. A hypothetic SiC PN diode has a much higher knee voltage and a wider extrinsic or operating temperature range, and the same applies to SiC BJT, which altogether makes SiC devices more appropriate for high-temperature and high-power applications.

silicon carbide; PN diode; BJT transistor; temperature characteristic; Ebers-Moll model

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Podaci o izdanju

75 (3)

2008.

97-104

objavljeno

0013-5852

Povezanost rada

Elektrotehnika, Računarstvo

Indeksiranost