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Structural-relaxation-induced bondlength and bondangle changes in amorphized Ge (CROSBI ID 93476)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Glover, Chris J. ; Ridgway, Mark C. ; Yu, K.M. ; Foran, G.J. ; Desnica-Franković, Dunja Ida ; Clerc, C. ; Hansen, J.L. ; Nylandsted Larsen, A. Structural-relaxation-induced bondlength and bondangle changes in amorphized Ge // Physical review. B, Condensed matter and materials physics, 63 (2001), 7; 0732041-0732044

Podaci o odgovornosti

Glover, Chris J. ; Ridgway, Mark C. ; Yu, K.M. ; Foran, G.J. ; Desnica-Franković, Dunja Ida ; Clerc, C. ; Hansen, J.L. ; Nylandsted Larsen, A.

engleski

Structural-relaxation-induced bondlength and bondangle changes in amorphized Ge

Low-temperature structural relaxation in amorphised Ge has been characterised by extended X-ray absorption fine structure spectroscopy (EXAFS) and Raman spectroscopy. For the first time, a relaxation-temperature-dependent decrease in the mean value and asymmetry of the interatomic distance distribution has been shown to accompany the well-documented reduction in bondangle distribution. Whilst the initial state of the unrelaxed, as-implanted, amorphous Ge was ion-dose-dependant, relaxation at 200 °C yielded a common ion-dose-independent interatomic distance distribution. The results provide further compelling support for the defect annihilation model of structural relaxation, and imply that the measured heat release on structural relaxation should be implant-condition dependent.

amorphous Ge; EXAFS; structural relaxation; Raman

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Podaci o izdanju

63 (7)

2001.

0732041-0732044

objavljeno

1098-0121

1550-235X

Povezanost rada

Fizika

Indeksiranost časopisa/nadređene publikacije